The data comes from a recent study funded by the State Government of Saxony. The study aimed to establish if COLD SPLIT could achieve full crack propagation across the laser plane when applied to GaAs. Participants included a leading materials supplier and a renowned laser institute, as well as SILTECTRA. The results validated COLD SPLIT as a high-performance thinning solution for GaAs and demonstrated that the technique can successfully thin a range of diverse materials with complex properties.
“Significantly lower consumables costs are akey driver of COLD SPLIT’s compelling CoO, especially for SiC-based devices,” said SILTECTRA’s CTO, Dr. Jan Richter. “While the industry is starting to adopt SiC for power semiconductors, it is an extraordinarily hard substance. Every single micron must be ground and polished, micron-by-micron. Grinding involves expensive diamond-based consumables, and when coupled with the technique’s inherent material waste, costs can be high. In contrast, COLD SPLIT produces almost no waste which vastly reduces consumables costs. And because the technique can save virtually every micron of SiC and turn surplus material into a bonus wafer, CoO is further boosted.”
Binder concluded: “Much of our new data is occurring in real time as the industry shifts fast to new materials. That said, the innovation has been happening at SILTECTRA for many years and is protected by 70 patent families covering technology, manufacturing equipment, materials and expertise. It is gratifying to see our discoveries exceeding even their original promise as we collaborate with manufacturers to help them achieve aggressive roadmap goals.”